Pulsed Laser Diodes

Pulsed Laser Diodes

Pulsed semiconductor lasers in the near IR (NIR) are commonly used for long distance time-of-flight or phase-shift range finding systems. Excelitas offers a broad range of suited pulsed 905 nm lasers including monolithic layered structures with up to 4 active areas per chip, resulting in up to 100 Watts of peak output power.

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A laser diode is a laser where the active medium is a semiconductor similar to that found in a light-emitting diode. The most common and practical type of laser diode is formed from a p-n junction and powered by injected electric current. The laser cavity has mirrors at each end to reflect back and forth photons to create an amplification effect when the waves are in phase. At certain frequencies a stable standing wave pattern is formed. At these frequencies the cavity is in resonance, and the oscillation can be sustained with minimum losses. At resonance, an integral number of half wavelengths of the resonating wavelength of the resonating wave must fit into the light of the cavity:

L = mλ/2

Where λ=wavelength of the resonating frequency (m)
L = length of the cavity (m)
m = an integral
Product List
  
  
  
C86119EH1064 nm pulsed laser. 2W @ 4A. 10/32 Coax Package
C86120EH-101064 nm pulsed laser. 0.4W@ 4A, Pigtailed 14 PIN DIL Package
C86153EH-10850 nm pulsed laser. 1.3 W min @ 4A. Pigtailed 14 PIN DIL Package
C86153EH-12850 nm pulsed laser. 1 W min @ 4A. Pigtailed 14 PIN DIL Package
C86153EH-13850 nm pulsed laser. 0.75 W min @ 4A. Pigtailed 14 PIN DIL Package
C86155E-10Quasi-Continuous-Wave 980 nm Laser DiodeDatasheet
DPGAS1S03H905 nm pulsed laser. 75 µm stripe width. Double cavity on single chip, total 2 emitting stripes. 17W @ 10A, 100ns. Metal package.
DPGAS1S09H905 nm pulsed laser. 225 µm stripe width. Double cavity on single chip, total 2 emitting stripes. 50W @ 30A, 100ns. Metal package.
DPGEW1S03H905 nm pulsed laser. 75 µm stripe width. Double cavity on single chip, total 2 emitting stripes. 13W @ 10A, 50ns. Plastic package.
DPGEW1S09H905 nm pulsed laser. 225 µm stripe width. Double cavity on single chip, total 2 emitting stripes. 45W @ 30A, 50ns. Plastic package.
PGAS1S03H905 nm pulsed laser. 75 µm stripe width. Single chip, 1 emitting stripe. 9W @ 10A, 100ns. 6.2 W @ 7A, 150ns. Metal package.Datasheet
PGAS1S09H905 nm pulsed laser. 225 µm stripe width. Single chip, 1 emitting stripe. 30W @ 30A, 100ns. 19W @22A, 150ns. Metal package.Datasheet
PGEW1S03H905 nm pulsed laser. 75 µm stripe width. Single chip, 1 emitting stripe. 6.5W @ 10A, 50ns. Plastic package.Datasheet
PGEW1S09H905 nm pulsed laser. 225 µm stripe width. Single chip, 1 emitting stripe. 23W @ 30A, 50ns. Plastic package.Datasheet
PVGR1S06H1550 nm pulsed laser. 150 µm stripe width. 4W @ 20A, 200ns. CD 9mm package.
PVGR2S06H1550 nm pulsed laser. 150 µm stripe width. 2 chips stacked. 8W @ 20A, 100ns. CD 9mm package.
PVGR4S12H1550 nm pulsed laser. 300 µm stripe width. 4 chips stacked. 50W @ 75A, 50ns. CD 9mm package.
PVGS1S06H1550 nm pulsed laser. 150 µm stripe width. 4W @ 20A, 200ns. TO metal package.
PVGS2S06H1550 nm pulsed laser. 150 µm stripe width. 2 chips stacked. 8W @ 20A, 100ns. TO metal package.
QPGAS1S03H905 nm pulsed laser. 75 µm stripe width. Quad cavity on single chip, total 4 emitting stripes. 33W @ 10A, 100ns. Metal package.
QPGAS1S09H905 nm pulsed laser. 225 µm stripe width. Quad cavity on single chip, total 4 emitting stripes. 100W @ 30A, 100ns. Metal package.
QPGAS2S03H905 nm pulsed laser. 75 µm stripe width. Quad cavity, 2 stacked chips, total 8 emitting stripes. 65W @ 10A, 100ns. Metal package.
QPGAS2S09H905 nm pulsed laser. 225 µm stripe width. Quad cavity, 2 stacked chips, total 8 emitting stripes. 200W @ 30A, 100ns. Metal package.
QPGAS3S03H905 nm pulsed laser. 75 µm stripe width. Quad cavity, 3 stacked chips, total 12 emitting stripes. 95W @ 10A, 100ns. Metal package.
QPGAS3S09H905 nm pulsed laser. 225 µm stripe width. Quad cavity, 3 stacked chips, total 12 emitting stripes. 300W @ 30A, 100ns. Metal package.
QPGEW1S03H905 nm pulsed laser. 75 µm stripe width. Quad cavity on single chip, total 4 emitting stripes. 26W @ 10A, 50ns. Plastic package.
QPGEW1S09H905 nm pulsed laser. 225 µm stripe width. Quad cavity on single chip, total 4 emitting stripes. 90W @ 30A, 50ns. Plastic package.
TPGAS1S03H905 nm pulsed laser. 75 µm stripe width. Triple cavity on single chip, total 3 emitting stripes. 25W @ 10A, 100ns. Metal package.
TPGAS1S09H905 nm pulsed laser. 225 µm stripe width. Triple cavity on single chip, total 3 emitting stripes. 75W @ 30A, 100ns. Metal package.
TPGAS2S03H905 nm pulsed laser. 75 µm stripe width. Triple cavity, 2 stacked chips, total 6 emitting stripes. 50W @ 10A, 100ns. Metal package.
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