Avalanche Photodiodes

Avalanche Photodiodes APD

An Avalanche Photodiode (APD) provides higher sensitivity than a standard photodiode. It is ideal for extreme low-level light (LLL) detection and photon counting. Offered in Silicon or InGaAs materials, these devices provide detectivity from 400 nm - 1100 nm. Multiple configurations are available to provide a wide range of sensitivity and speed options.

Products offered include:

  • High-volume, cost effective silicon APDs for Range Finding and Laser Meter applications.
  • Large area, UV-enhanced APDs for Molecular Imaging (PET).
  • Long wavelength enhanced APDs for Analytical Applications.
  • Multi element and quadrant APDs for Analytical Instruments.
  • Standard, high performing APDs for Industrial applications.
  • Hybrid Modules for easy implementation into high performing Instruments.

The use of APDs instead of PIN photodetectors will result in improved sensitivity in many applications. In general, APDs are useful in applications where the noise of the amplifier is high — i.e., much higher than the noise in the PIN photodetector. Thus, although an APD is always noisier than the equivalent PIN, improved signal-to-noise can be achieved in the system for APD gains up to the point where the noise of the APD is comparable to that of the amplifier. For example, when the system bandwidth is high, the amplifier noise is high, and an APD is likely to be useful. On the other hand, in very low bandwidth systems, the noise of the amplifier is likely to be very low, in which case, the APD may not be the best choice. In applications where the background optical power falling on the detector is very high, such as operation of the detector in daylight conditions with little or no filtering, an APD may not be useful, except perhaps at low gain, since the multiplied noise of the background illumination will be very high and may exceed that of the amplifier.

Product List
  
  
  
C30626HSilicon Avalanche Photodiode. Large area in ceramic package for radiation detection
C30644ECERHInGaAs Avalanche Photodiode in cermic submount package version. 50 µm active area.
C30644EHInGaAs Avalanche Photodiode in hermetic TO-18 package version. 50 µm active area.
C30645ECERHInGaAs Avalanche Photodiode in cermic submount package version. 80 µm active area.Datasheeet
C30645EHInGaAs Avalanche Photodiode in hermetic TO-18 package version. 80 µm active area.Datasheet
C30659-1060-3AHAvalanche Photodiode (APD) Receiver Module with 1060 nm Si-APD. 50 MHz bandwidth.
C30659-1060-R8BHAvalanche Photodiode (APD) Receiver Module with 1060 nm Si-APD. 200 MHz bandwidth.
C30659-1550E - R08BHC30659-1550E - R08BH Si and InGaAs APD Preamplifier ModulesDatasheet
C30659-1550E - R2AHC30659-1550E - R2AH Si and InGaAs APD Preamplifier ModulesDatasheet
C30659-1550-R08BHAvalanche Photodiode (APD) Receiver Module with 1550 nm InGaAs-APD. 200 MHz bandwidth.
C30659-1550-R2AHAvalanche Photodiode (APD) Receiver Module with 1550 nm InGaAs-APD. 50 MHz bandwidth.
C30659-900-R5BHAvalanche Photodiode (APD) Receiver Module with 900 nm Si-APD. 200 MHz bandwidth.
C30659-900-R8AHAvalanche Photodiode (APD) Receiver Module with 900 nm Si-APD. 50 MHz bandwidth.
C30662ECERHLarge area InGaAs Avalanche Photodiode in ceramic submount package version. 200 µm active area.Datasheet
C30662EHLarge area InGaAs Avalanche Photodiode in hermetic TO-18 package version. 200 µm active area.Datasheet
C30703FHExtremely large area (10 mm x 10 mm) silicon APD in flat pack for radiation detection.
C30724EHSilicon Avalanche Photodiode (APD). 920 nm peak sensitivity. Low temperature coefficient. Metal TO-housing.
C30724PHSilicon Avalanche Photodiode (APD). 920 nm peak sensitivity. Low temperature coefficient. Plastic TO-housing.
C30737CHAvalanche Photodiode C30737CH SeriesDatasheet
C30737EH-230-80Silicon Avalanche Photodiode (APD). 800 nm peak. 230 µm diameter. Metal TO-housing.
C30737EH-230-90Silicon Avalanche Photodiode (APD). 900 nm peak. 230 µm diameter. Metal TO-housing.
C30737EH-500-80Silicon Avalanche Photodiode (APD). 800 nm peak. 500 µm diameter. Metal TO-housing.Datrasheet
C30737EH-500-90Silicon Avalanche Photodiode (APD). 900 nm peak. 500 µm diameter. Metal TO-housing.
C30737LH-230-80Silicon Avalanche Photodiode (APD). 800 nm peak. 230 µm diameter. Leadless ceramic carrier (LCC).Datasheet
C30737LH-230-81Silicon Avalanche Photodiode (APD). 800 nm peak. 230 µm diameter. Leadless ceramic carrier (LCC). 635 nm optical bandpass.Datasheet
C30737LH-230-83Silicon Avalanche Photodiode (APD). 900 nm peak. 230 µm diameter. Leadless ceramic carrier (LCC).Datasheet
C30737LH-230-90Silicon Avalanche Photodiode (APD). 900 nm peak. 230 µm diameter. Leadless ceramic carrier (LCC).Datasheet
C30737LH-230-91Silicon Avalanche Photodiode (APD). 900 nm peak. 230 µm diameter. Leadless ceramic carrier (LCC).Datasheet
C30737LH-230-92Silicon Avalanche Photodiode (APD). 900 nm peak. 230 µm diameter. Leadless ceramic carrier (LCC). 905 nm optical bandpass.Datasheet
C30737LH-500-80Silicon Avalanche Photodiode (APD). 800 nm peak. 500 µm diameter. Leadless ceramic carrier (LCC).Datasheet
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